MPX5010GSX vs MPXV5010GP Сравнение
Подробное сравнение бок о бок MPX5010GSX от NXP Semiconductors и MPXV5010GP от STMicroelectronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
STMicroelectronics
MPXV5010GP - 0-10 kPa Vented Gauge Pressure Sensor, 8-SMD | STMicroelectronics
MPXV5010GP ✓ АктивенСравнение характеристик
| Параметр | MPX5010GSX | MPXV5010GP |
|---|---|---|
| Бренд | NXP Semiconductors | STMicroelectronics |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $10,25 | $9,95 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Тип выхода | Analog Voltage | Analog Voltage |
| Output Voltage Span | 0.2 V to 4.7 V | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Ток потребления | [DATA_NEEDED: supply current typical] | 5 mA typical |
| Accuracy | 1.0 % typical (per datasheet) | [DATA_NEEDED: accuracy %FS] |
| Response Time | [DATA_NEEDED: response time] | — |
| Рабочая температура | 0 C to 85 C | 0 C to +85 C |
| Port Size | Male 0.19 inch (4.93 mm) Tube, Side Port | — |
| Корпус / Типоразмер | 6-SIP Module (Case 867F) | — |
| Termination Style | Through-Hole PCB | — |
| Тип монтажа | Through Hole | Surface Mount |
| Статус RoHS | Compliant | — |
| Media Compatibility | Dry gases (air, non-corrosive) | — |
| Technology | Piezoresistive MEMS with on-chip ASIC | — |
| Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Operating Pressure Max | — | 10 kPa |
| Выходное напряжение | — | 0.2 V to 4.7 V |
| Напряжение питания | — | 5 V |
| Sensitivity | — | 450 mV/kPa (approx, 0.2-4.7 V span) |
| Port Style | — | Male - 3.17 mm (0.13 in) Tube, Side Port |
| Корпус | — | 8-SMD, Gull Wing, Side Port |
| Sensor Technology | — | Piezoresistive (MEMS silicon) |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| Output Ratiometric | — | Yes (output scales with VDD) |