MPX5010GSX vs MPXV5010GP Vergleich
Detaillierter Direktvergleich von MPX5010GSX von NXP Semiconductors und MPXV5010GP von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPXV5010GP - 0-10 kPa Vented Gauge Pressure Sensor, 8-SMD | STMicroelectronics
MPXV5010GP ✓ AktivSpezifikationsvergleich
| Parameter | MPX5010GSX | MPXV5010GP |
|---|---|---|
| Marke | NXP Semiconductors | STMicroelectronics |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,25 | $9,95 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Ausgangstyp | Analog Voltage | Analog Voltage |
| Output Voltage Span | 0.2 V to 4.7 V | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Versorgungsstrom | [DATA_NEEDED: supply current typical] | 5 mA typical |
| Accuracy | 1.0 % typical (per datasheet) | [DATA_NEEDED: accuracy %FS] |
| Response Time | [DATA_NEEDED: response time] | — |
| Betriebstemperatur | 0 C to 85 C | 0 C to +85 C |
| Port Size | Male 0.19 inch (4.93 mm) Tube, Side Port | — |
| Gehäuse / Bauform | 6-SIP Module (Case 867F) | — |
| Termination Style | Through-Hole PCB | — |
| Montageart | Through Hole | Surface Mount |
| RoHS-Status | Compliant | — |
| Media Compatibility | Dry gases (air, non-corrosive) | — |
| Technology | Piezoresistive MEMS with on-chip ASIC | — |
| Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Operating Pressure Max | — | 10 kPa |
| Ausgangsspannung | — | 0.2 V to 4.7 V |
| Versorgungsspannung | — | 5 V |
| Sensitivity | — | 450 mV/kPa (approx, 0.2-4.7 V span) |
| Port Style | — | Male - 3.17 mm (0.13 in) Tube, Side Port |
| Gehäuse | — | 8-SMD, Gull Wing, Side Port |
| Sensor Technology | — | Piezoresistive (MEMS silicon) |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| Output Ratiometric | — | Yes (output scales with VDD) |