MRF5S19060MR1 vs MRF5S19060NBR1 Comparison
Detailed side-by-side comparison of MRF5S19060MR1 by NXP Semiconductors and MRF5S19060NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ ActiveSpecification Comparison
| Parameter | MRF5S19060MR1 | MRF5S19060NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.60 | $25.40 |
| Manufacturer | NXP (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S19060MR1 | — |
| Transistor Type | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| Package | TO-270 WB-4 (Ceramic) | TO-272 WB-4 (overmolded plastic) |
| Mounting Type | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Test Signal | 2 x N-CDMA | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Operating Class | Class AB | — |
| Configuration | — | Dual Die (2 x N), Common Source |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Pin Count | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |