MRF5S19060MR1 vs MRF5S19060NBR1 Comparaison
Comparaison détaillée côte à côte de MRF5S19060MR1 par NXP Semiconductors et MRF5S19060NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF5S19060MR1 | MRF5S19060NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,60 | $25,40 |
| Manufacturer | NXP (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S19060MR1 | — |
| Type de transistor | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| Boîtier | TO-270 WB-4 (Ceramic) | TO-272 WB-4 (overmolded plastic) |
| Type de montage | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Test Signal | 2 x N-CDMA | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Operating Class | Class AB | — |
| Configuration | — | Dual Die (2 x N), Common Source |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Nombre de broches | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |