MRF5S19060MR1 vs MRF5S19060NBR1 Сравнение
Подробное сравнение бок о бок MRF5S19060MR1 от NXP Semiconductors и MRF5S19060NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ АктивенNXP Semiconductors
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF5S19060NBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF5S19060MR1 | MRF5S19060NBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $25,60 | $25,40 |
| Manufacturer | NXP (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF5S19060MR1 | — |
| Тип транзистора | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Drain Current (Id) | 750 mA | — |
| Output Power (Pout, avg) | 12 W (N-CDMA) | — |
| Output Power (Pout, PEP) | 60 W (typical) | — |
| Power Gain (Gps) | 14 dB (typical) | — |
| Drain Efficiency (etaD) | 45% (typical) | — |
| Operating Voltage | 28 V | — |
| Корпус | TO-270 WB-4 (Ceramic) | TO-272 WB-4 (overmolded plastic) |
| Тип монтажа | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Test Signal | 2 x N-CDMA | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Operating Class | Class AB | — |
| Configuration | — | Dual Die (2 x N), Common Source |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Число выводов | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |