MRF5S19060NBR1 vs MRF6S18100NBR1 Comparison

Detailed side-by-side comparison of MRF5S19060NBR1 by NXP Semiconductors and MRF6S18100NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Active
NXP Semiconductors
MRF6S18100NBR1 MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP

MRF6S18100NBR1 Obsolete

Specification Comparison

Parameter MRF5S19060NBR1 MRF6S18100NBR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $25.40 $68.90
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source Single, common-source
Frequency Band 1930 MHz to 1990 MHz —
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. —
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz —
Drain Current 750 mA (typical operating DC) —
Package TO-272 WB-4 (overmolded plastic) —
Mounting Type Surface Mount (SMD) Surface Mount / Flange Mount
Pin Count 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS —
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant (per NXP product page)
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] —
Application — RF Power Amplifier (GSM/GSM EDGE base station)
Frequency Range — 1805 MHz to 1990 MHz
Test Frequency — 1.99 GHz
Drain-Source Voltage (V(BR)DSS) — 68 V
Test Supply Voltage (VDD) — 28 V
Test Drain Current — 900 mA
Output Power (Pout) — 100 W
Power Gain (Gps) — 14.5 dB (typical at 1.99 GHz)
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Package / Case — TO-272 WB-4
Supplier Device Package — TO-272 WB-4
Operating Mode — Class AB / Class C (per design)

Datasheets & Resources

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