MRF5S19060NBR1 vs MRF6S18100NBR1 对比
详细并排对比 MRF5S19060NBR1 出自 NXP Semiconductors 和 MRF6S18100NBR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF5S19060NBR1 | MRF6S18100NBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.40 | $68.90 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Dual Die (2 x N), Common Source | Single, common-source |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| 封装 | TO-272 WB-4 (overmolded plastic) | — |
| 安装类型 | Surface Mount (SMD) | Surface Mount / Flange Mount |
| 引脚数量 | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant (per NXP product page) |
| MSL 等级 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| 封装 / 外壳 | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |