MRF5S19060NBR1 vs MRF6S18100NBR1 비교
다음의 상세 나란히 비교: MRF5S19060NBR1 제조: NXP Semiconductors 및 MRF6S18100NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF5S19060NBR1 | MRF6S18100NBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.40 | $68.90 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Dual Die (2 x N), Common Source | Single, common-source |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| 패키지 | TO-272 WB-4 (overmolded plastic) | — |
| 실장 유형 | Surface Mount (SMD) | Surface Mount / Flange Mount |
| 핀 수 | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | Compliant (per NXP product page) |
| MSL 레벨 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| 패키지 / 케이스 | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |