MRF5S21100HSR3 vs MRF5S21100HSR5 Comparison
Detailed side-by-side comparison of MRF5S21100HSR3 by NXP Semiconductors and MRF5S21100HSR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteNXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ ActiveSpecification Comparison
| Parameter | MRF5S21100HSR3 | MRF5S21100HSR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.27 | $19.80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Obsolete | Active |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET |
| Frequency | 2.16 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.05 A | — |
| Power Output (Avg, 2x W-CDMA) | 23 W | — |
| Power Gain | 13.5 dB | 13.5 dB (typical) |
| Voltage - Rated (Max V DSS) | 65 V | — |
| Maximum VDD Operation | 32 V (qualified) | — |
| Package / Case | NI-780S (lower thermal resistance, ceramic flanged) | NI-780S (ceramic flange-mount) |
| Supplier Device Package | NI-780S | — |
| Configuration | Single, Class AB | — |
| Mounting Type | Chassis / flange mount (through-hole, surface ceramic) | Chassis / Flange Mount (through-hole RF) |
| RoHS Status | Compliant (low gold plating, 40 microinches nominal) | [DATA_NEEDED: RoHS status from NXP product page] |
| ESD Protection | Integrated | — |
| Matching | Internally matched (input and output) | — |
| Lead Finish | Gold, 40 microinches nominal | — |
| Packaging | Tape and Reel | — |
| Designed Application | W-CDMA, TDMA, CDMA, multicarrier base station PA | — |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | — | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Output Power (Pout) | — | 23 W (CW) |
| Drain Current (Id) | — | 1.05 A |
| Operating Temperature Range | — | -40C to +150C (junction) |
| Lead-Free | — | [DATA_NEEDED: lead-free finish] |