MRF5S21100HSR3 vs MRF5S21100HSR5 Comparaison
Comparaison détaillée côte à côte de MRF5S21100HSR3 par NXP Semiconductors et MRF5S21100HSR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteNXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ ActifComparaison des spécifications
| Paramètre | MRF5S21100HSR3 | MRF5S21100HSR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $37,27 | $19,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Obsolete | Active |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET |
| Frequency | 2.16 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.05 A | — |
| Power Output (Avg, 2x W-CDMA) | 23 W | — |
| Power Gain | 13.5 dB | 13.5 dB (typical) |
| Voltage - Rated (Max V DSS) | 65 V | — |
| Maximum VDD Operation | 32 V (qualified) | — |
| Boîtier / Format | NI-780S (lower thermal resistance, ceramic flanged) | NI-780S (ceramic flange-mount) |
| Supplier Device Package | NI-780S | — |
| Configuration | Single, Class AB | — |
| Type de montage | Chassis / flange mount (through-hole, surface ceramic) | Chassis / Flange Mount (through-hole RF) |
| Statut RoHS | Compliant (low gold plating, 40 microinches nominal) | [DATA_NEEDED: RoHS status from NXP product page] |
| ESD Protection | Integrated | — |
| Matching | Internally matched (input and output) | — |
| Lead Finish | Gold, 40 microinches nominal | — |
| Packaging | Tape and Reel | — |
| Designed Application | W-CDMA, TDMA, CDMA, multicarrier base station PA | — |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | — | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Output Power (Pout) | — | 23 W (CW) |
| Drain Current (Id) | — | 1.05 A |
| Plage de température de fonctionnement | — | -40C to +150C (junction) |
| Lead-Free | — | [DATA_NEEDED: lead-free finish] |