MRF5S21100HSR3 vs MRF5S21100HSR5 Comparación
Comparación detallada lado a lado de MRF5S21100HSR3 por NXP Semiconductors y MRF5S21100HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteNXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ ActivoComparación de especificaciones
| Parámetro | MRF5S21100HSR3 | MRF5S21100HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $37,27 | $19,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Obsolete | Active |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel RF Power MOSFET |
| Frequency | 2.16 GHz to 2.17 GHz (2110-2170 MHz) | — |
| Test Voltage | 28 V | — |
| Test Current | 1.05 A | — |
| Power Output (Avg, 2x W-CDMA) | 23 W | — |
| Power Gain | 13.5 dB | 13.5 dB (typical) |
| Voltage - Rated (Max V DSS) | 65 V | — |
| Maximum VDD Operation | 32 V (qualified) | — |
| Encapsulado / Carcasa | NI-780S (lower thermal resistance, ceramic flanged) | NI-780S (ceramic flange-mount) |
| Supplier Device Package | NI-780S | — |
| Configuration | Single, Class AB | — |
| Tipo de montaje | Chassis / flange mount (through-hole, surface ceramic) | Chassis / Flange Mount (through-hole RF) |
| Estado RoHS | Compliant (low gold plating, 40 microinches nominal) | [DATA_NEEDED: RoHS status from NXP product page] |
| ESD Protection | Integrated | — |
| Matching | Internally matched (input and output) | — |
| Lead Finish | Gold, 40 microinches nominal | — |
| Packaging | Tape and Reel | — |
| Designed Application | W-CDMA, TDMA, CDMA, multicarrier base station PA | — |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | — | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Output Power (Pout) | — | 23 W (CW) |
| Drain Current (Id) | — | 1.05 A |
| Rango de temperatura de funcionamiento | — | -40C to +150C (junction) |
| Lead-Free | — | [DATA_NEEDED: lead-free finish] |