MRF5S4140HR3 vs MRF5S9101NR1 Comparison

Detailed side-by-side comparison of MRF5S4140HR3 by NXP Semiconductors and MRF5S9101NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S4140HR3 MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 ✓ Active
NXP Semiconductors
MRF5S9101NR1 MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 ✓ Active

Specification Comparison

Parameter MRF5S4140HR3 MRF5S9101NR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $30.55 $61.40
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 400-500 MHz —
Test Frequency 465 MHz 960 MHz
Typical Output Power 28 W avg. —
Power Gain 21 dB at 465 MHz 17.5 dB (typ at 960 MHz, 26 V, 700 mA)
Operating Drain Voltage 28 V typical —
Drain-Source Voltage (Max) 65 V —
DC Bias Current (Id) 1.25 A typical —
Configuration Single, common-source —
Maximum Power Dissipation 427 W absolute (per partstack profile) —
Package NI-780H-2L (ceramic flange mount) —
Mounting Style Flange mount, surface-mount leads —
Input Matching Internal, broadband —
Operating Mode Class AB, large-signal —
Application Single N-CDMA base station PA, 450 MHz band GSM / GSM EDGE base station PAs, 869–960 MHz
RoHS Status [DATA_NEEDED: explicit RoHS status not in web data] —
Lead-Free [DATA_NEEDED: lead-free status not in web data] —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRF5S9101NR1
Frequency Range — 869 MHz to 960 MHz
Output Power (P1dB) — 100 W (typ)
Drain Supply Voltage (Vdd) — 26 V (nominal), 28 V (max operating)
Drain Breakdown Voltage (Vdss) — 68 V
Quiescent Current (Idq) — 700 mA
Drain Current (Test) — 700 mA
Operating Temperature Range — [DATA_NEEDED: operating temperature range]
Junction Temperature (Max) — 200 °C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
Package / Case — TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold
Mounting Type — Surface / Flange Mount (through-board thermal pad)
Lead-Free / RoHS — Lead-free (N suffix indicates lead-free transition)
Thermal Resistance (junction-to-case) — [DATA_NEEDED: theta_JC]

Datasheets & Resources

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