MRF5S4140HR3 vs MRF5S9101NR1 Comparaison
Comparaison détaillée côte à côte de MRF5S4140HR3 par NXP Semiconductors et MRF5S9101NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF5S4140HR3 | MRF5S9101NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $30,55 | $61,40 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 400-500 MHz | — |
| Test Frequency | 465 MHz | 960 MHz |
| Typical Output Power | 28 W avg. | — |
| Power Gain | 21 dB at 465 MHz | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) |
| Operating Drain Voltage | 28 V typical | — |
| Drain-Source Voltage (Max) | 65 V | — |
| DC Bias Current (Id) | 1.25 A typical | — |
| Configuration | Single, common-source | — |
| Maximum Power Dissipation | 427 W absolute (per partstack profile) | — |
| Boîtier | NI-780H-2L (ceramic flange mount) | — |
| Style de montage | Flange mount, surface-mount leads | — |
| Input Matching | Internal, broadband | — |
| Operating Mode | Class AB, large-signal | — |
| Application | Single N-CDMA base station PA, 450 MHz band | GSM / GSM EDGE base station PAs, 869–960 MHz |
| Statut RoHS | [DATA_NEEDED: explicit RoHS status not in web data] | — |
| Lead-Free | [DATA_NEEDED: lead-free status not in web data] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF5S9101NR1 |
| Frequency Range | — | 869 MHz to 960 MHz |
| Output Power (P1dB) | — | 100 W (typ) |
| Drain Supply Voltage (Vdd) | — | 26 V (nominal), 28 V (max operating) |
| Drain Breakdown Voltage (Vdss) | — | 68 V |
| Quiescent Current (Idq) | — | 700 mA |
| Drain Current (Test) | — | 700 mA |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (Max) | — | 200 °C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Boîtier / Format | — | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold |
| Type de montage | — | Surface / Flange Mount (through-board thermal pad) |
| Lead-Free / RoHS | — | Lead-free (N suffix indicates lead-free transition) |
| Thermal Resistance (junction-to-case) | — | [DATA_NEEDED: theta_JC] |