MRF5S4140HR3 vs MRF5S9101NR1 Comparación
Comparación detallada lado a lado de MRF5S4140HR3 por NXP Semiconductors y MRF5S9101NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
MRF5S9101NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF5S4140HR3 | MRF5S9101NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $30,55 | $61,40 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 400-500 MHz | — |
| Test Frequency | 465 MHz | 960 MHz |
| Typical Output Power | 28 W avg. | — |
| Power Gain | 21 dB at 465 MHz | 17.5 dB (typ at 960 MHz, 26 V, 700 mA) |
| Operating Drain Voltage | 28 V typical | — |
| Drain-Source Voltage (Max) | 65 V | — |
| DC Bias Current (Id) | 1.25 A typical | — |
| Configuration | Single, common-source | — |
| Maximum Power Dissipation | 427 W absolute (per partstack profile) | — |
| Encapsulado | NI-780H-2L (ceramic flange mount) | — |
| Estilo de montaje | Flange mount, surface-mount leads | — |
| Input Matching | Internal, broadband | — |
| Operating Mode | Class AB, large-signal | — |
| Application | Single N-CDMA base station PA, 450 MHz band | GSM / GSM EDGE base station PAs, 869–960 MHz |
| Estado RoHS | [DATA_NEEDED: explicit RoHS status not in web data] | — |
| Lead-Free | [DATA_NEEDED: lead-free status not in web data] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRF5S9101NR1 |
| Frequency Range | — | 869 MHz to 960 MHz |
| Output Power (P1dB) | — | 100 W (typ) |
| Drain Supply Voltage (Vdd) | — | 26 V (nominal), 28 V (max operating) |
| Drain Breakdown Voltage (Vdss) | — | 68 V |
| Quiescent Current (Idq) | — | 700 mA |
| Drain Current (Test) | — | 700 mA |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Junction Temperature (Max) | — | 200 °C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Encapsulado / Carcasa | — | TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold |
| Tipo de montaje | — | Surface / Flange Mount (through-board thermal pad) |
| Lead-Free / RoHS | — | Lead-free (N suffix indicates lead-free transition) |
| Thermal Resistance (junction-to-case) | — | [DATA_NEEDED: theta_JC] |