MRF6S21060BR1 vs MRF6S21060NBR1 Comparison
Detailed side-by-side comparison of MRF6S21060BR1 by NXP Semiconductors and MRF6S21060NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 Obsolete
Specification Comparison
| Parameter | MRF6S21060BR1 | MRF6S21060NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.80 | $21.40 |
| Transistor Type | N-Channel Enhancement-Mode LDMOS | LDMOS, N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) | 68 V | — |
| Test Voltage | 28 V | — |
| Test Current | 610 mA | — |
| Output Power (Pout) | 14 W | — |
| Power Gain | 15.5 dB at 2.12 GHz | 15.5 dB |
| Frequency Range | Up to 2170 MHz | — |
| Operating Mode | Class AB | Class AB |
| Package / Case | TO-272 WB-4 (ceramic) | — |
| Mounting Type | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | — |
| Target Application | W-CDMA base station final-stage PA | W-CDMA base station final stage |
| Suitable For | TDMA, CDMA, multicarrier amplifier applications | — |
| Current Rating (Datasheet) | 10 uA | — |
| Manufacturer | NXP (formerly Freescale Semiconductor) | — |
| Technology | — | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.12 GHz |
| Test Drain Voltage (VDD) | — | 28 V |
| Test Quiescent Current (IDQ) | — | 1600 mA |
| Output Power (Avg, Single-Carrier W-CDMA) | — | 14 W |
| Power Added Efficiency | — | [DATA_NEEDED: PAE %] |
| Package | — | TO-272 WB-4 (ceramic flanged) |
| RoHS Status | — | compliant |
| Lead Free | — | yes |