MRF6S21060BR1 vs MRF6S21060NBR1 비교
다음의 상세 나란히 비교: MRF6S21060BR1 제조: NXP Semiconductors 및 MRF6S21060NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 Obsolete
사양 비교
| 파라미터 | MRF6S21060BR1 | MRF6S21060NBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $6.80 | $21.40 |
| 트랜지스터 유형 | N-Channel Enhancement-Mode LDMOS | LDMOS, N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) | 68 V | — |
| Test Voltage | 28 V | — |
| Test Current | 610 mA | — |
| Output Power (Pout) | 14 W | — |
| Power Gain | 15.5 dB at 2.12 GHz | 15.5 dB |
| Frequency Range | Up to 2170 MHz | — |
| Operating Mode | Class AB | Class AB |
| 패키지 / 케이스 | TO-272 WB-4 (ceramic) | — |
| 실장 유형 | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | — |
| Target Application | W-CDMA base station final-stage PA | W-CDMA base station final stage |
| Suitable For | TDMA, CDMA, multicarrier amplifier applications | — |
| Current Rating (Datasheet) | 10 uA | — |
| Manufacturer | NXP (formerly Freescale Semiconductor) | — |
| Technology | — | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.12 GHz |
| Test Drain Voltage (VDD) | — | 28 V |
| Test Quiescent Current (IDQ) | — | 1600 mA |
| Output Power (Avg, Single-Carrier W-CDMA) | — | 14 W |
| Power Added Efficiency | — | [DATA_NEEDED: PAE %] |
| 패키지 | — | TO-272 WB-4 (ceramic flanged) |
| RoHS 상태 | — | compliant |
| Lead Free | — | yes |