MRF6S21060BR1 vs MRF6S21060NBR1 Vergleich
Detaillierter Direktvergleich von MRF6S21060BR1 von NXP Semiconductors und MRF6S21060NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 Obsolete
Spezifikationsvergleich
| Parameter | MRF6S21060BR1 | MRF6S21060NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,80 | $21,40 |
| Transistortyp | N-Channel Enhancement-Mode LDMOS | LDMOS, N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) | 68 V | — |
| Test Voltage | 28 V | — |
| Test Current | 610 mA | — |
| Output Power (Pout) | 14 W | — |
| Power Gain | 15.5 dB at 2.12 GHz | 15.5 dB |
| Frequency Range | Up to 2170 MHz | — |
| Operating Mode | Class AB | Class AB |
| Gehäuse / Bauform | TO-272 WB-4 (ceramic) | — |
| Montageart | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | — |
| Target Application | W-CDMA base station final-stage PA | W-CDMA base station final stage |
| Suitable For | TDMA, CDMA, multicarrier amplifier applications | — |
| Current Rating (Datasheet) | 10 uA | — |
| Manufacturer | NXP (formerly Freescale Semiconductor) | — |
| Technology | — | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.12 GHz |
| Test Drain Voltage (VDD) | — | 28 V |
| Test Quiescent Current (IDQ) | — | 1600 mA |
| Output Power (Avg, Single-Carrier W-CDMA) | — | 14 W |
| Power Added Efficiency | — | [DATA_NEEDED: PAE %] |
| Gehäuse | — | TO-272 WB-4 (ceramic flanged) |
| RoHS-Status | — | compliant |
| Lead Free | — | yes |