MRF6S21100NBR1 vs MRF6S21100NR1 Comparison
Detailed side-by-side comparison of MRF6S21100NBR1 by NXP Semiconductors and MRF6S21100NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S21100NBR1 | MRF6S21100NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.00 | $21.24 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Transistor Type | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Drain Supply Voltage (Typical) | 28 V | — |
| Pout (Average, W-CDMA) | 23 W | — |
| Power Gain (Typical) | 14.5 dB | — |
| Operating Current (at Pout) | 1.05 A | — |
| Quiescent Current (IDQ, Typical) | 1600 mA | — |
| Drain Voltage Rated | 68 V | — |
| Package / Case | TO-272 WB-4 (plastic over-molded) | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-272BB | — |
| Mounting Type | Surface Mount / Flange Mount with PCB thermal pad | Surface Mount (plastic overmold) |
| Technology | LDMOS, enhancement-mode | RF Power LDMOS (7th-generation) |
| Application | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage | — |
| Part Status | Obsolete | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: confirm RoHS compliance status] |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Frequency Band | — | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | — | 28 V |
| Drain Current (Continuous) | — | 1.05 A |
| Drain Current (Pulsed) | — | [DATA_NEEDED: pulsed drain current value] |
| Power Gain | — | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | — | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | — | 1600 mA |
| Operating Mode | — | Class AB |
| Modulation Support | — | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | — | 68 V (rated) |