MRF6S21100NBR1 vs MRF6S21100NR1 对比
详细并排对比 MRF6S21100NBR1 出自 NXP Semiconductors 和 MRF6S21100NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF6S21100NBR1 | MRF6S21100NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.00 | $21.24 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| 晶体管类型 | N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Drain Supply Voltage (Typical) | 28 V | — |
| Pout (Average, W-CDMA) | 23 W | — |
| Power Gain (Typical) | 14.5 dB | — |
| Operating Current (at Pout) | 1.05 A | — |
| Quiescent Current (IDQ, Typical) | 1600 mA | — |
| Drain Voltage Rated | 68 V | — |
| 封装 / 外壳 | TO-272 WB-4 (plastic over-molded) | TO-270 WB-4 (Case 1486-03, Style 1) |
| Supplier Device Package | TO-272BB | — |
| 安装类型 | Surface Mount / Flange Mount with PCB thermal pad | Surface Mount (plastic overmold) |
| Technology | LDMOS, enhancement-mode | RF Power LDMOS (7th-generation) |
| Application | W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage | — |
| Part Status | Obsolete | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: confirm RoHS compliance status] |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Frequency Band | — | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | — | 28 V |
| Drain Current (Continuous) | — | 1.05 A |
| Drain Current (Pulsed) | — | [DATA_NEEDED: pulsed drain current value] |
| Power Gain | — | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | — | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | — | 1600 mA |
| Operating Mode | — | Class AB |
| Modulation Support | — | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | — | 68 V (rated) |