MRF6S21100NBR1 vs MRF6S21100NR1 비교

다음의 상세 나란히 비교: MRF6S21100NBR1 제조: NXP Semiconductors 및 MRF6S21100NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S21100NBR1 MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP

MRF6S21100NBR1 Obsolete
NXP Semiconductors
MRF6S21100NR1 MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP

MRF6S21100NR1 ✓ 활성

사양 비교

파라미터 MRF6S21100NBR1 MRF6S21100NR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 Obsolete 활성
재고 상태 In Stock In Stock
단가 (USD) $25.00 $21.24
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
트랜지스터 유형 N-Channel Enhancement-Mode LDMOS (Lateral MOSFET) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Operating Frequency Range 2110 MHz to 2170 MHz —
Drain Supply Voltage (Typical) 28 V —
Pout (Average, W-CDMA) 23 W —
Power Gain (Typical) 14.5 dB —
Operating Current (at Pout) 1.05 A —
Quiescent Current (IDQ, Typical) 1600 mA —
Drain Voltage Rated 68 V —
패키지 / 케이스 TO-272 WB-4 (plastic over-molded) TO-270 WB-4 (Case 1486-03, Style 1)
Supplier Device Package TO-272BB —
실장 유형 Surface Mount / Flange Mount with PCB thermal pad Surface Mount (plastic overmold)
Technology LDMOS, enhancement-mode RF Power LDMOS (7th-generation)
Application W-CDMA base station, TD-SCDMA, multicarrier PA, cellular final-stage —
Part Status Obsolete —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: confirm RoHS compliance status]
동작 온도 [DATA_NEEDED: operating temperature range] —
Frequency Band — 2110 MHz to 2170 MHz (W-CDMA downlink)
Drain Voltage (VDD) — 28 V
Drain Current (Continuous) — 1.05 A
Drain Current (Pulsed) — [DATA_NEEDED: pulsed drain current value]
Power Gain — 14.5 dB typical at 2.11 GHz
Output Power (Pout) — 23 W average (W-CDMA)
Quiescent Current (IDQ) — 1600 mA
Operating Mode — Class AB
Modulation Support — W-CDMA, TDMA, CDMA, multi-carrier
Drain-Source Breakdown (V(BR)DSS) — 68 V (rated)

데이터시트 & 자료

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