MRF6S9045NBR1 vs MRF6S9045NR1 Comparison
Detailed side-by-side comparison of MRF6S9045NBR1 by NXP Semiconductors and MRF6S9045NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ ActiveSpecification Comparison
| Parameter | MRF6S9045NBR1 | MRF6S9045NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.10 | $16.40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (acquired by NXP) |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral DMOS, RF power | Lateral MOSFET (RF Power) |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | 880 MHz (up to 1000 MHz) |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | — |
| Mounting Type | Surface Mount (flange/ceramic) | Surface Mount |
| Package / Case | NI-880H-2L (TO-272-2 variant) | TO-270-2 (Case 1265-09, Style 1) |
| Operating Temperature | [DATA_NEEDED: junction/storage temperature range] | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Application | — | 880 MHz Single-Carrier N-CDMA Base Station PA |