MRF6S9045NBR1 vs MRF6S9045NR1 Сравнение
Подробное сравнение бок о бок MRF6S9045NBR1 от NXP Semiconductors и MRF6S9045NR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF6S9045NBR1 | MRF6S9045NR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $12,10 | $16,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (acquired by NXP) |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral DMOS, RF power | Lateral MOSFET (RF Power) |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | 880 MHz (up to 1000 MHz) |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | — |
| Тип монтажа | Surface Mount (flange/ceramic) | Surface Mount |
| Корпус / Типоразмер | NI-880H-2L (TO-272-2 variant) | TO-270-2 (Case 1265-09, Style 1) |
| Рабочая температура | [DATA_NEEDED: junction/storage temperature range] | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Application | — | 880 MHz Single-Carrier N-CDMA Base Station PA |