MRF6S9045NBR1 vs MRF6S9045NR1 Comparaison
Comparaison détaillée côte à côte de MRF6S9045NBR1 par NXP Semiconductors et MRF6S9045NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S9045NBR1 | MRF6S9045NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $12,10 | $16,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (acquired by NXP) |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral DMOS, RF power | Lateral MOSFET (RF Power) |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | 880 MHz (up to 1000 MHz) |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | — |
| Type de montage | Surface Mount (flange/ceramic) | Surface Mount |
| Boîtier / Format | NI-880H-2L (TO-272-2 variant) | TO-270-2 (Case 1265-09, Style 1) |
| Température de fonctionnement | [DATA_NEEDED: junction/storage temperature range] | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Application | — | 880 MHz Single-Carrier N-CDMA Base Station PA |