MRF6S9130HSR3 vs MRF6S9160HR3 Comparison
Detailed side-by-side comparison of MRF6S9130HSR3 by NXP Semiconductors and MRF6S9160HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF6S9130HSR3 | MRF6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $65.00 | $510.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (now NXP Semiconductors) |
| Part Status | Active | — |
| Transistor Type | Lateral N-Channel RF Power MOSFET (LDMOS) | — |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | — |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Package / Case | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| Mounting Type | Chassis / flange mount with screw-down | Chassis/Surface flange mount (screw-down) |
| Operating Temperature Range | [DATA_NEEDED: Tj operating range] | — |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Pin Count | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| RoHS Status | Compliant | unknown |
| Lead-Free | Yes | — |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Operating Frequency Range | — | [DATA_NEEDED: full datasheet frequency range] |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |