MRF6S9130HSR3 vs MRF6S9160HR3 Comparaison
Comparaison détaillée côte à côte de MRF6S9130HSR3 par NXP Semiconductors et MRF6S9160HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S9130HSR3 | MRF6S9160HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $65,00 | $510,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (now NXP Semiconductors) |
| Part Status | Active | — |
| Type de transistor | Lateral N-Channel RF Power MOSFET (LDMOS) | — |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | — |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| Boîtier / Format | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| Type de montage | Chassis / flange mount with screw-down | Chassis/Surface flange mount (screw-down) |
| Plage de température de fonctionnement | [DATA_NEEDED: Tj operating range] | — |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| Nombre de broches | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Statut RoHS | Compliant | unknown |
| Lead-Free | Yes | — |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Operating Frequency Range | — | [DATA_NEEDED: full datasheet frequency range] |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |