MRF6S9130HSR3 vs MRF6S9160HR3 비교
다음의 상세 나란히 비교: MRF6S9130HSR3 제조: NXP Semiconductors 및 MRF6S9160HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ 활성사양 비교
| 파라미터 | MRF6S9130HSR3 | MRF6S9160HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $65.00 | $510.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (now NXP Semiconductors) |
| Part Status | Active | — |
| 트랜지스터 유형 | Lateral N-Channel RF Power MOSFET (LDMOS) | — |
| Operating Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 68 V | — |
| Drain Current (Id) Max | [DATA_NEEDED: maximum pulsed drain current] | — |
| Typical Quiescent Current (Idq) | 950 mA | — |
| Drain-Source On Resistance (Rds(on)) | [DATA_NEEDED: Rds(on) value] | — |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) | — |
| Power Gain (Gps) | 19.2 dB typical | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency figure] | — |
| Supply Voltage (Vdd) Recommended | 28 V | — |
| 패키지 / 케이스 | NI-780S (CASE 465-06, Style 1) ceramic flange | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| 실장 유형 | Chassis / flange mount with screw-down | Chassis/Surface flange mount (screw-down) |
| 동작 온도 범위 | [DATA_NEEDED: Tj operating range] | — |
| Storage Temperature Range | [DATA_NEEDED: Tstg range] | — |
| 핀 수 | 3 | — |
| Style | Style 1 | — |
| Technology | LDMOS (laterally diffused MOS) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| RoHS 상태 | Compliant | unknown |
| Lead-Free | Yes | — |
| Packing | Tape & Reel (HSR3 suffix) | — |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Operating Frequency Range | — | [DATA_NEEDED: full datasheet frequency range] |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |