MRF6S9160HSR3 vs MRF6S9130HSR3 Comparison
Detailed side-by-side comparison of MRF6S9160HSR3 by NXP Semiconductors and MRF6S9130HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Last Time BuyNXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF6S9160HSR3 | MRF6S9130HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $92.40 | $65.00 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | 880 MHz |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | [DATA_NEEDED: drain efficiency figure] |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Package | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Mounting Type | Flange / Chassis Mount with screw holes | Chassis / flange mount with screw-down |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| Package / Case | — | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Operating Temperature Range | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| Pin Count | — | 3 |
| Style | — | Style 1 |
| Technology | — | LDMOS (laterally diffused MOS) |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |