MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MPN: MRF6S9160HSR3 ⚠ Last Time Buy| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $118.2 | $11,820.00 |
| 500 | $105 | $52,500.00 |
| 1,000 | $92.4 | $92,400.00 |
MRF6S9160HSR3 Overview
An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET optimized for high-frequency, high-power RF amplification. Within the broader semiconductor hierarchy, RF LDMOS devices sit at the intersection of discrete power transistors and RF/microwave components, designed specifically for the final-stage PA (power amplifier) in wireless infrastructure. They typically combine high breakdown voltage, excellent thermal performance, and broadband gain for Doherty, push-pull, and single-ended PA architectures used in 4G LTE and legacy 2G/3G networks.
Key features of the MRF6S9160HSR3 include 21 dB typical power gain at 880 MHz, 31% drain efficiency, and -46.8 dBc ACPR at 750 kHz offset in N-CDMA. It is rated for 28 V VDD operation with a 68 V drain-source voltage rating, providing substantial headroom for VSWR mismatch. The part is internally matched for simplified board integration and includes integrated ESD protection.
The device uses NXP's high-voltage LDMOS process technology with a lateral structure that minimizes parasitic capacitance, enabling broadband performance from 865 MHz through 960 MHz. Its NI-780S flange-mount package provides a low thermal resistance path to the system heatsink, essential for dissipating the 100+ W peak power in continuous CDMA service.
Typical applications include cellular base-station final-stage PAs, GSM/EDGE multicarrier amplifiers, and N-CDMA driver stages. It is widely used in 900 MHz repeaters, microcells, and macrocell base stations where linearity and efficiency are both critical design parameters.
Design consideration: Always use sufficient external matching networks to present the correct load impedance at the fundamental and harmonic frequencies. The datasheet-recommended application circuit should be followed closely, as LDMOS devices are sensitive to load-pull characteristics beyond the matched operating point.
This page synthesizes distributor pricing, drop-in same-package and migration alternatives, and practical design notes not found in the manufacturer datasheet alone, including guidance on the MRFE6S9160HSR3 device-migration path per PCN12895.
Drop-in alternatives for MRF6S9160HSR3 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6S9160HSR3 (same form factor and footprint) — differing in Mounting Type, Transistor Type, Technology, Manufacturer, Package / Case.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRFE6S9160HSR3
✅ Drop-In✓ In Stock
$55.2 / Unit
View Datasheet →MRF6S9160HR3
✅ Drop-In✓ In Stock
$510 / Unit
View Datasheet →MRFE6S9160HR3
✅ Drop-In✓ In Stock
$25.2 / Unit
View Datasheet →MRF8S9102NR3
✅ Drop-In✓ In Stock
$24.1 / Unit
View Datasheet →MRF6S9045NR1
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
$16.4 / Unit
View Datasheet →MRF6S9200HR3
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6S9160HSR3 Maximum Ratings & Electrical Characteristics
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier |
| Operating Frequency | 865 MHz to 960 MHz |
| Test Frequency | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V |
| Operating Voltage (VDD) | 28 V |
| Test Bias Current (IDQ) | 1.2 A |
| Output Power (Pout, Avg.) | 35 W Avg. |
| Power Gain | 20.9 dB typical at 880 MHz |
| Drain Efficiency | 31% typical at 880 MHz |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) |
| Package | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Mounting Type | Flange / Chassis Mount with screw holes |
| Lead-Free Status | Lead free (HSR3 suffix) |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier |
MRF6S9160HSR3 ni-780s (case 465-06, style 1) ceramic flange-mount Pin Configuration Guide
Pin configuration for MRF6S9160HSR3 (ni-780s (case 465-06, style 1) ceramic flange-mount package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for MRF6S9160HSR3.
Refer to the datasheet for full pin configuration.
DC Safe Operating Area (MRF6S9160HSR3, 28 V VDD)
Typical Applications
MRF6S9160HSR3 is suitable for 6 applications: Cellular Base Station Final-Stage PA, GSM / GSM EDGE Multicarrier Amplifier, N-CDMA Repeater / Microcell Power Amplifier, Doherty PA Carrier Stage, Industrial / Scientific 900 MHz RF Power Source, Legacy 2G/3G Macrocell Upgrade Path.
Cellular Base Station Final-Stage PA
The MRF6S9160HSR3 is purpose-built for the final-stage power amplifier in 900 MHz cellular base stations. Its 35 W average output power, 20.9 dB gain, and 31% drain efficiency at 880 MHz directly meet the requirements of single-carrier N-CDMA final-stage PAs that must deliver Pilot, Sync, Paging, and Traffic Codes 8-13 with -46.8 dBc ACPR. The 28 V VDD operation matches standard macrocell PA supply rails, and the 68 Vdss rating provides VSWR headroom. Place the device on a heatsink sized for continuous 35 W service; pair it with the datasheet-recommended input/output matching networks and use NXP reference designs as the PCB layout starting point.
Recommended
GSM / GSM EDGE Multicarrier Amplifier
Designed for GSM and GSM EDGE base-station multicarrier amplifier applications, the MRF6S9160HSR3 provides the linearity and efficiency required for multi-carrier GSM drives up to 960 MHz. Its 31% drain efficiency reduces DC power consumption in always-on base stations, while its -46.8 dBc ACPR supports the linearity mask for GSM 900 service. For multicarrier operation, follow NXP's multicarrier load-pull design notes, add harmonic filter networks, and consider a Doherty topology if average efficiency must exceed 40%. The flange-mount NI-780S package simplifies integration into standard macrocell chassis.
Recommended
N-CDMA Repeater / Microcell Power Amplifier
Repeater and microcell base-station designs benefit from the MRF6S9160HSR3's compact 35 W average output and 20.9 dB gain, which eliminate the need for additional driver stages in many N-CDMA microcell applications. Operating at 28 V with 1.2 A IDQ, the device delivers the linearity required for indoor/outdoor N-CDMA coverage extensions while fitting within tight microcell chassis thermal budgets. Use the datasheet application circuit and verify thermal performance with a heatsink rated for the 100+ W peak power dissipation of CDMA service. The NI-780S flange package bolts directly to the microcell chassis for optimal thermal transfer.
Recommended
Doherty PA Carrier Stage
The MRF6S9160HSR3 is well suited for the carrier (main) amplifier of a two-way Doherty configuration in 900 MHz LTE/3GPP base stations because of its 28 V rating, 35 W average output, and broadband match. In a Doherty architecture, the carrier operates continuously while the peaking amplifier activates at high PAR, yielding 40-45% combined efficiency. Follow NXP's Doherty application note for proper 50-ohm and 25-ohm quarter-wave network design, and tune output matching for the carrier/peaking load modulation behavior. Use the NI-780S chassis-mount package to simplify heatsink design.
Recommended
Industrial / Scientific 900 MHz RF Power Source
Beyond cellular, the MRF6S9160HSR3's 35 W continuous-wave capability at 865-960 MHz makes it applicable to industrial RF heating, plasma generation, and 900 MHz ISM-band scientific instrumentation. The lateral LDMOS structure provides high breakdown ruggedness needed for industrial load-mismatch conditions, while the 20.9 dB gain reduces driver-stage complexity. For CW operation, derate output power for continuous-duty service and verify junction temperature under worst-case heatsink temperature. The NI-780S flange package supports direct chassis mounting in industrial RF generator cabinets.
Recommended
Legacy 2G/3G Macrocell Upgrade Path
Service operators migrating legacy 2G GSM and 3G N-CDMA macrocell PAs to higher-density LTE sites can use the MRF6S9160HSR3 to replace aging final-stage transistors on existing 28 V PA boards. Its NI-780S package footprint matches the installed base of NXP/Freescale macrocell PAs, simplifying field-replacement logistics. The 20.9 dB gain preserves existing driver-stage gain budgets, and the 35 W average output meets legacy GSM/N-CDMA power masks. For new LTE designs, NXP recommends the MRFE6S9160HSR3 with its improved ESD process for long-term reliability.
Recommended
Recommended Products Summary
Engineering reference data for MRF6S9160HSR3 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRFE6S9160HSR3 | MRF6S9160HR3 | MRFE6S9160HR3 | MRF8S9102NR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (CASE 465-06) | NI-780S (CASE 465-06) - same | NI-780S (CASE 465-06) - same | NI-780S (CASE 465-06) - same | OM-780 (CASE 465A-06) - same chassis-mount footprint |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz | 900-960 MHz |
| Operating Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Vdss Rated | 68 V | 68 V | 68 V | 68 V | 68 V |
| ESD Class | Standard | Improved (per PCN12895) | Standard | Improved | Standard |
Key Differentiators
- Same-package migration path with improved ESD (vs MRFE6S9160HSR3)
- Original NXP/Freescale 900 MHz LDMOS with broad service stock (vs MRF6S9160HR3)
- Chassis-mount-compatible package variant for higher power (vs MRF8S9102NR3)
Design Notes
The MRF6S9160HSR3 is a flange-mount device that must be bolted directly to a heatsink or chassis with high-quality thermal compound. Estimated: at 35 W average N-CDMA output and 31% drain efficiency, DC input power is approximately 113 W and dissipation ~78 W continuous. The NI-780S ceramic package must be mounted to a heatsink sized to keep the flange temperature within the datasheet-recommended operating range. Insufficient thermal management is the leading cause of field failure for RF power LDMOS devices in continuous cellular service.
Follow the NXP datasheet reference PCB layout for input/output matching networks. Use low-loss RF substrate (Rogers RO4003C or equivalent) for the matching network area, with 50-ohm microstrip lines and via fences to isolate the input and output sides. Keep gate bias traces away from the RF path to prevent coupling, and place bypass capacitors as close as possible to the gate and drain bias pins. Ground the package flange through the mounting screw holes with multiple low-inductance vias.
The MRF6S9160HSR3 is in last-time-buy status per NXP PCN12895 and is replaced by the MRFE6S9160HSR3 in the same NI-780S package. For new designs, target the MRFE6S9160HSR3 to avoid part-availability risk and benefit from the improved ESD process. Do not assume the S suffix (HSR3) denotes a different part - it indicates tape-and-reel packaging of the identical die. Verify quiescent current bias (1.2 A IDQ) and gate bias sequencing at first power-up to prevent thermal runaway.
Match the device's 50-ohm input and output impedances using microstrip-based matching networks as shown in the NXP application circuit. Place harmonic trap networks (typically 2nd and 3rd harmonic stubs) at the output to meet regulatory emission masks. Use a directional coupler at the output for closed-loop power control feedback in base-station applications. Ensure the load-pull characterization is preserved by terminating the device in the recommended matching network under all operating conditions, especially under VSWR mismatch.
RF power LDMOS devices are sensitive to gate-bias stability; use low-impedance gate bias supplies with adequate bypass capacitance (typically 10 uF electrolytic + 100 nF ceramic + 1 nF ceramic at the gate pin) to prevent low-frequency oscillation. Add a small series resistor (10-33 ohm) in the gate bias path to suppress parasitic oscillation, as recommended in NXP application notes. Verify the quiescent current is stable across the full operating temperature range, as LDMOS devices can exhibit thermal drift if the gate bias is not properly regulated.
Compliance Information
Lead-free (HSR3 suffix) per NXP datasheet; RoHS compliant. AEC-Q100 not applicable for RF power MOSFET. Conflict-minerals compliance per NXP corporate statement.
