MRF6S9160HSR3 vs MRF6S9130HSR3 对比
详细并排对比 MRF6S9160HSR3 出自 NXP Semiconductors 和 MRF6S9130HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ 最后一次采购NXP Semiconductors
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
MRF6S9130HSR3 ✓ 量产中规格对比
| 参数 | MRF6S9160HSR3 | MRF6S9130HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 最后采购期 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $92.40 | $65.00 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | 880 MHz |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | [DATA_NEEDED: drain efficiency figure] |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| 封装 | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| 安装类型 | Flange / Chassis Mount with screw holes | Chassis / flange mount with screw-down |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status | — | Active |
| Drain-Source Voltage (Vdss) Max | — | 68 V |
| Drain Current (Id) Max | — | [DATA_NEEDED: maximum pulsed drain current] |
| Typical Quiescent Current (Idq) | — | 950 mA |
| Drain-Source On Resistance (Rds(on)) | — | [DATA_NEEDED: Rds(on) value] |
| Output Power (Pout) Avg | — | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | — | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | — | 28 V |
| 封装 / 外壳 | — | NI-780S (CASE 465-06, Style 1) ceramic flange |
| 工作温度范围 | — | [DATA_NEEDED: Tj operating range] |
| Storage Temperature Range | — | [DATA_NEEDED: Tstg range] |
| 引脚数量 | — | 3 |
| Style | — | Style 1 |
| Technology | — | LDMOS (laterally diffused MOS) |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| Packing | — | Tape & Reel (HSR3 suffix) |
| Primary Applications | — | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |