MRF6S9160HSR3 vs MRF6S9160HR3 Comparison
Detailed side-by-side comparison of MRF6S9160HSR3 by NXP Semiconductors and MRF6S9160HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Last Time BuySpecification Comparison
| Parameter | MRF6S9160HSR3 | MRF6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $92.40 | $510.00 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | — |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Package | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Mounting Type | Flange / Chassis Mount with screw holes | Chassis/Surface flange mount (screw-down) |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Technology | — | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Operating Frequency Range | — | [DATA_NEEDED: full datasheet frequency range] |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Package / Case | — | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| RoHS Status | — | unknown |
| Manufacturer | — | Freescale Semiconductor (now NXP Semiconductors) |