MRF6S9160HSR3 vs MRF6S9160HR3 比較

詳細な並列比較: MRF6S9160HSR3 メーカー: NXP Semiconductors および MRF6S9160HR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
MRF6S9160HSR3 MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 ⚠ ラストタイムバイ
NXP Semiconductors
MRF6S9160HR3 MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale

MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale

MRF6S9160HR3 ✓ 生産中

仕様比較

パラメータ MRF6S9160HSR3 MRF6S9160HR3
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 ラストバイ 有効
在庫状況 In Stock In Stock
単価(USD) $92.40 $510.00
トランジスタタイプ LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Application RF Power Amplifier —
Operating Frequency 865 MHz to 960 MHz —
Test Frequency 880 MHz —
Drain-Source Voltage (Vdss) Rated 68 V —
Operating Voltage (VDD) 28 V —
Test Bias Current (IDQ) 1.2 A —
Output Power (Pout, Avg.) 35 W Avg. —
Power Gain 20.9 dB typical at 880 MHz —
Drain Efficiency 31% typical at 880 MHz —
ACPR @ 750 kHz Offset -46.8 dBc (N-CDMA) —
パッケージ NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount —
実装タイプ Flange / Chassis Mount with screw holes Chassis/Surface flange mount (screw-down)
Lead-Free Status Lead free (HSR3 suffix) —
Designed Waveforms N-CDMA, GSM, GSM EDGE, multicarrier —
Technology — RF Power MOSFET (lateral N-channel, enhancement mode)
Frequency Band — 880 MHz (single-band cellular UHF)
Operating Frequency Range — [DATA_NEEDED: full datasheet frequency range]
Drain-Source Voltage (VDSS) — [DATA_NEEDED: VDSS rating]
Supply Voltage (VDD) — 28 V (typical operation)
Average Output Power (Pout avg) — 35 W (N-CDMA, 880 MHz)
Peak Output Power (Pout peak) — [DATA_NEEDED: peak Pout rating]
Power Gain (Gp) — 20.9 dB (typical at 880 MHz)
Drain Efficiency (ηD) — [DATA_NEEDED: efficiency at rated Pout]
Quiescent Bias Current (IDQ) — 1.2 A (typical)
パッケージ / ケース — NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged
Configuration — Single (single-ended, common-source)
Operating Mode — Enhancement mode, Class AB
Test Signal — Single N-CDMA
Maximum Power Dissipation — 565 W (absolute, per Partstack parametric record)
Lead Finish — [DATA_NEEDED: lead finish]
RoHS ステータス — unknown
Manufacturer — Freescale Semiconductor (now NXP Semiconductors)

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