MRF6S9160HSR3 vs MRFE6S9160HR3 Comparison
Detailed side-by-side comparison of MRF6S9160HSR3 by NXP Semiconductors and MRFE6S9160HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Last Time BuySpecification Comparison
| Parameter | MRF6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $92.40 | $25.20 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Package | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Mounting Type | Flange / Chassis Mount with screw holes | Chassis / Flange mount (through-hole RF leads) |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors |
| Technology | — | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Package / Case | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Operating Temperature Range | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| MSL Level | — | Not applicable (non-SMD air-cavity package) |