MRF6S9160HSR3 vs MRFE6S9160HR3 Сравнение
Подробное сравнение бок о бок MRF6S9160HSR3 от NXP Semiconductors и MRFE6S9160HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Последняя закупкаСравнение характеристик
| Параметр | MRF6S9160HSR3 | MRFE6S9160HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Последняя закупка | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $92,40 | $25,20 |
| Тип транзистора | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | 32.4% (typical, N-CDMA, 880 MHz) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Корпус | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | — |
| Тип монтажа | Flange / Chassis Mount with screw holes | Chassis / Flange mount (through-hole RF leads) |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors |
| Technology | — | HV6E lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (V DSS) | — | 70 V (max) |
| Drain Current (continuous) | — | [DATA_NEEDED: typical drain current at TC=25C] |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain Supply Voltage (V DD) | — | 28 V (typical) |
| Output Power (Average) | — | 35 W (single-carrier N-CDMA, 880 MHz) |
| Output Power (PEP) | — | [DATA_NEEDED: PEP at specified conditions] |
| Power Gain (G ps / G p) | — | 21 dB (typical at 880 MHz) |
| Корпус / Типоразмер | — | NI-780H-2L (ceramic/metal air-cavity flange-mount) |
| Диапазон рабочих температур | — | -40C to +150C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Thermal Resistance (R thJC) | — | [DATA_NEEDED: thermal resistance junction-to-case] |
| Input Match | — | Internally matched input (broadband) |
| Статус RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Уровень MSL | — | Not applicable (non-SMD air-cavity package) |