MRF6S9160HSR3 vs MRFE6S9160HSR3 Comparison
Detailed side-by-side comparison of MRF6S9160HSR3 by NXP Semiconductors and MRFE6S9160HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Last Time BuySpecification Comparison
| Parameter | MRF6S9160HSR3 | MRFE6S9160HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $92.40 | $55.20 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | 21 dB (typical at 880 MHz) |
| Drain Efficiency | 31% typical at 880 MHz | 31% (typical at 35 W avg.) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Package | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | NI-780S (NI780HS) ceramic, bolted flange |
| Mounting Type | Flange / Chassis Mount with screw holes | Through-hole / chassis mount with flange |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Drain-Source Breakdown Voltage | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| RoHS Status | — | [DATA_NEEDED: confirm via latest distributor listing] |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |