MRF6S9160HSR3 vs MRFE6S9160HSR3 Vergleich
Detaillierter Direktvergleich von MRF6S9160HSR3 von NXP Semiconductors und MRFE6S9160HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRF6S9160HSR3 | MRFE6S9160HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $92,40 | $55,20 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier | — |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | 21 dB (typical at 880 MHz) |
| Drain Efficiency | 31% typical at 880 MHz | 31% (typical at 35 W avg.) |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| Gehäuse | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | NI-780S (NI780HS) ceramic, bolted flange |
| Montageart | Flange / Chassis Mount with screw holes | Through-hole / chassis mount with flange |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRFE6S9160HSR3 |
| Drain-Source Voltage (VDSS) | — | 66 V (rated) |
| Drain-Source-Durchbruchspannung | — | [DATA_NEEDED: V(BR)DSS minimum] |
| Operating Drain Voltage (VDD) | — | 28 V (typical bias) |
| Continuous Drain Current (ID) | — | 10 uA [leakage spec context, ID max [DATA_NEEDED]] |
| Quiescent Current (IDQ) | — | 1200 mA |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Output Power (Pout) Avg. | — | 35 W (under N-CDMA drive, 9.8 dB PAR) |
| Output Power Peak | — | 160 W (peak envelope) |
| ACPR at 750 kHz Offset | — | -46.8 dBc |
| RoHS-Status | — | [DATA_NEEDED: confirm via latest distributor listing] |
| Technology | — | HV6E (6th gen high-voltage LDMOS) |