MRF6V3090NBR1 vs MRF6V3090NR1 Comparison

Detailed side-by-side comparison of MRF6V3090NBR1 by NXP Semiconductors and MRF6V3090NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6V3090NBR1 MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP

MRF6V3090NBR1 ✓ Active
NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Active

Specification Comparison

Parameter MRF6V3090NBR1 MRF6V3090NR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $44.50 $59.90
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Application RF Power Amplifier —
Frequency Band 470 MHz to 1215 MHz —
Typical Output Power (CW) 90 W at 860 MHz, 50 V —
Power Gain 22 dB at 860 MHz, 90 W CW —
Drain Supply Voltage (Vdd) 50 V DC —
Drain Current (Id) 350 mA (test condition) —
VSWR Tolerance 10:1 all phase angles, 50 V, 860 MHz, 90 W CW 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW
Package / Case TO-272 WB-4 (ceramic) —
Mounting Type Surface Mount / Screw-Mount Chassis Surface Mount / Flange Mount with bolt-down heatsink
Configuration Single N-Channel MOSFET —
Channel Mode Enhancement-mode —
Operating Temperature Range [DATA_NEEDED: operating temperature range] —
Junction-to-Case Thermal Resistance [DATA_NEEDED: theta_jc] —
RoHS Status unknown [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt]
Lead-Free unknown —
Qualification Not Qualified (per partstack listing) —
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 350 mA
Frequency Range — 470 MHz to 1215 MHz
Test Frequency — 860 MHz
Output Power (CW, Pout) — 90 W
Power Gain (typical) — 22 dB at 860 MHz
Drain Efficiency (typical) — [DATA_NEEDED: drain efficiency %]
Input Power (Pin) — [DATA_NEEDED: input drive level for 90 W Pout]
Package Type — TO-270 WB-4 (TO-272-4 family, ceramic air-cavity)
Operating Junction Temperature — -40C to +200C (max TJ)
Thermal Resistance — [DATA_NEEDED: theta_JC value C/W]
MSL Level — [DATA_NEEDED: MSL rating]
Reel Quantity (R1 suffix) — 500 per reel (R1 = 500 unit reel)

Datasheets & Resources

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