MRF6V3090NBR1 vs MRF6V3090NR1 Comparación
Comparación detallada lado a lado de MRF6V3090NBR1 por NXP Semiconductors y MRF6V3090NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF6V3090NBR1 | MRF6V3090NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $44,50 | $59,90 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | RF Power Amplifier | — |
| Frequency Band | 470 MHz to 1215 MHz | — |
| Typical Output Power (CW) | 90 W at 860 MHz, 50 V | — |
| Power Gain | 22 dB at 860 MHz, 90 W CW | — |
| Drain Supply Voltage (Vdd) | 50 V DC | — |
| Drain Current (Id) | 350 mA (test condition) | — |
| VSWR Tolerance | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Encapsulado / Carcasa | TO-272 WB-4 (ceramic) | — |
| Tipo de montaje | Surface Mount / Screw-Mount Chassis | Surface Mount / Flange Mount with bolt-down heatsink |
| Configuration | Single N-Channel MOSFET | — |
| Channel Mode | Enhancement-mode | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Resistencia térmica de unión a carcasa | [DATA_NEEDED: theta_jc] | — |
| Estado RoHS | unknown | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] |
| Lead-Free | unknown | — |
| Qualification | Not Qualified (per partstack listing) | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 350 mA |
| Frequency Range | — | 470 MHz to 1215 MHz |
| Test Frequency | — | 860 MHz |
| Output Power (CW, Pout) | — | 90 W |
| Power Gain (typical) | — | 22 dB at 860 MHz |
| Drain Efficiency (typical) | — | [DATA_NEEDED: drain efficiency %] |
| Input Power (Pin) | — | [DATA_NEEDED: input drive level for 90 W Pout] |
| Package Type | — | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Temperatura de unión de funcionamiento | — | -40C to +200C (max TJ) |
| Resistencia térmica | — | [DATA_NEEDED: theta_JC value C/W] |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Reel Quantity (R1 suffix) | — | 500 per reel (R1 = 500 unit reel) |