MRF8HP21080HR5 vs MRF7S21080HR3 Comparison

Detailed side-by-side comparison of MRF8HP21080HR5 by NXP Semiconductors and MRF7S21080HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF8HP21080HR5 MRF8HP21080HR5 - 16W 2.17GHz RF Power LDMOS | NXP

MRF8HP21080HR5 - 16W 2.17GHz RF Power LDMOS | NXP

MRF8HP21080HR5 Obsolete
NXP Semiconductors
MRF7S21080HR3 MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 ✓ Active

Specification Comparison

Parameter MRF8HP21080HR5 MRF7S21080HR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $88.00 $24.95
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Transistor Type LDMOS, N-Channel, Dual (2 elements) LDMOS, N-Channel Enhancement-Mode
Configuration Common Source, 2 Elements —
Frequency 2.17 GHz (2110–2170 MHz cellular band) —
Test Voltage 28 V —
Test Current 150 mA —
Power Gain 14.4 dB at 2.17 GHz 18 dB
Output Power (Avg.) 16 W (W-CDMA/LTE) —
Drain-Source Voltage Rating 65 V —
Package / Case NI-780-4 (Case 465M) —
Mounting Type Flange Mount / Chassis Mount Surface Mount / Flange Mount
Number of Terminals 4 —
Technology W-CDMA, LTE Lateral N-Channel RF Power MOSFET RF Power Field Effect Transistor (lateral MOSFET)
Surface Mount No (flange mount) —
Peak Reflow Temperature 260 C (not applicable - flange mount) —
Part Status (DigiKey) Discontinued at Digi-Key —
Frequency Band — 2110 MHz to 2170 MHz
Test Frequency — 2.11 GHz to 2.17 GHz
Rated Drain Voltage — 65 V
Test Supply Voltage (VDD) — 28 V
Quiescent Current (IDQ) — 800 mA
Output Power (Avg, W-CDMA) — 22 W Avg.
Drain Efficiency (typical) — 32 %
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz channel
Output Signal PAR — 6.5 dB at 0.01% CCDF
Input Signal PAR — 7.5 dB at 0.01% CCDF
Channel Bandwidth — 3.84 MHz
Package — NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount)
Application — CDMA / W-CDMA / LTE base-station power amplifiers

Datasheets & Resources

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