MRF8HP21080HR5 vs MRF7S21080HR3 비교
다음의 상세 나란히 비교: MRF8HP21080HR5 제조: NXP Semiconductors 및 MRF7S21080HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8HP21080HR5 | MRF7S21080HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $88.00 | $24.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| 트랜지스터 유형 | LDMOS, N-Channel, Dual (2 elements) | LDMOS, N-Channel Enhancement-Mode |
| Configuration | Common Source, 2 Elements | — |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | — |
| Power Gain | 14.4 dB at 2.17 GHz | 18 dB |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| 패키지 / 케이스 | NI-780-4 (Case 465M) | — |
| 실장 유형 | Flange Mount / Chassis Mount | Surface Mount / Flange Mount |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | RF Power Field Effect Transistor (lateral MOSFET) |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.11 GHz to 2.17 GHz |
| Rated Drain Voltage | — | 65 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 800 mA |
| Output Power (Avg, W-CDMA) | — | 22 W Avg. |
| Drain Efficiency (typical) | — | 32 % |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Input Signal PAR | — | 7.5 dB at 0.01% CCDF |
| Channel Bandwidth | — | 3.84 MHz |
| 패키지 | — | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) |
| Application | — | CDMA / W-CDMA / LTE base-station power amplifiers |