MRF8S19260HSR6 vs MRF6S19100HR3 Comparison
Detailed side-by-side comparison of MRF8S19260HSR6 by NXP Semiconductors and MRF6S19100HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ ActiveSpecification Comparison
| Parameter | MRF8S19260HSR6 | MRF6S19100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $124.00 | $95.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S19260HSR6 | MRF6S19100HR3 |
| Transistor Type | LDMOS, N-Channel, Dual | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | 16.1 dB (typical at 1.99 GHz) |
| Package / Case | NI-1230S-8 (ceramic air-cavity bolt-down) | NI-780H-2L (Case 465-06, Style 1) |
| Mounting Type | Chassis / Flange Mount (through-hole RF bolt-down) | Flanged / Screw-mount with ceramic body |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS Status | Compliant | Compliant (per NXP product page) |
| Operating Mode | Class AB and Class C capable | Class AB (linear) |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |