MRF8S19260HSR6 vs MRF6S19100HR3 비교
다음의 상세 나란히 비교: MRF8S19260HSR6 제조: NXP Semiconductors 및 MRF6S19100HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ 활성사양 비교
| 파라미터 | MRF8S19260HSR6 | MRF6S19100HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $124.00 | $95.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S19260HSR6 | MRF6S19100HR3 |
| 트랜지스터 유형 | LDMOS, N-Channel, Dual | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | 16.1 dB (typical at 1.99 GHz) |
| 패키지 / 케이스 | NI-1230S-8 (ceramic air-cavity bolt-down) | NI-780H-2L (Case 465-06, Style 1) |
| 실장 유형 | Chassis / Flange Mount (through-hole RF bolt-down) | Flanged / Screw-mount with ceramic body |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS 상태 | Compliant | Compliant (per NXP product page) |
| Operating Mode | Class AB and Class C capable | Class AB (linear) |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |