MRF8S19260HSR6 vs MRF6S19100HR3 Vergleich
Detaillierter Direktvergleich von MRF8S19260HSR6 von NXP Semiconductors und MRF6S19100HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S19260HSR6 | MRF6S19100HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $124,00 | $95,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8S19260HSR6 | MRF6S19100HR3 |
| Transistortyp | LDMOS, N-Channel, Dual | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | 16.1 dB (typical at 1.99 GHz) |
| Gehäuse / Bauform | NI-1230S-8 (ceramic air-cavity bolt-down) | NI-780H-2L (Case 465-06, Style 1) |
| Montageart | Chassis / Flange Mount (through-hole RF bolt-down) | Flanged / Screw-mount with ceramic body |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS-Status | Compliant | Compliant (per NXP product page) |
| Operating Mode | Class AB and Class C capable | Class AB (linear) |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |