MRF8S19260HSR6 vs MRF8S19260HR6 Comparison

Detailed side-by-side comparison of MRF8S19260HSR6 by NXP Semiconductors and MRF8S19260HR6 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Active
NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Active

Specification Comparison

Parameter MRF8S19260HSR6 MRF8S19260HR6
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $124.00 $96.40
Manufacturer NXP Semiconductors (formerly Freescale) Freescale Semiconductor (now NXP Semiconductors)
Part Number MRF8S19260HSR6 —
Transistor Type LDMOS, N-Channel, Dual LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 1930 MHz to 1990 MHz —
Test Frequency 1.99 GHz 1.96 GHz (1960 MHz)
Drain-Source Voltage (Max Rated) 65 V —
Operating Drain Voltage (Typical) 30 V —
Continuous Drain Current (Test) 1.6 A —
Output Power (CW / Avg) 74 W average —
Power Gain 18.2 dB at 1.99 GHz —
Package / Case NI-1230S-8 (ceramic air-cavity bolt-down) —
Mounting Type Chassis / Flange Mount (through-hole RF bolt-down) Chassis / heatsink mount (bolt-down flange)
Lead Free Status Compliant (per DigiKey listing) —
RoHS Status Compliant [DATA_NEEDED: confirm from NXP product page]
Operating Mode Class AB and Class C capable —
Application W-CDMA, CDMA, multi-carrier cellular base station PA —
Technology — Laterally Diffused Metal-Oxide Semiconductor (LDMOS)
Frequency Range — 1930 MHz to 1990 MHz
Drain-Source Voltage (V(BR)DSS) Rated — 65 V
Operating Drain Voltage (Test) — 30 V
Test Bias Current — 1.6 A
Average Output Power (Pout) — 74 W
Power Gain (Gp) — 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A
Drain Efficiency — [DATA_NEEDED: typical % at rated conditions]
Application Class — Class AB or Class C
Modulation Support — CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE
Package — NI-1230-8 (ceramic bolt-down, 2-lead flange)
Lead-Free Status — Yes

Datasheets & Resources

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