MRF8S19260HSR6 vs MRF8S19260HR6 Comparación
Comparación detallada lado a lado de MRF8S19260HSR6 por NXP Semiconductors y MRF8S19260HR6 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF8S19260HSR6 | MRF8S19260HR6 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $124,00 | $96,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (now NXP Semiconductors) |
| Part Number | MRF8S19260HSR6 | — |
| Tipo de transistor | LDMOS, N-Channel, Dual | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | 1.96 GHz (1960 MHz) |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | — |
| Encapsulado / Carcasa | NI-1230S-8 (ceramic air-cavity bolt-down) | — |
| Tipo de montaje | Chassis / Flange Mount (through-hole RF bolt-down) | Chassis / heatsink mount (bolt-down flange) |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| Estado RoHS | Compliant | [DATA_NEEDED: confirm from NXP product page] |
| Operating Mode | Class AB and Class C capable | — |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Technology | — | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) Rated | — | 65 V |
| Operating Drain Voltage (Test) | — | 30 V |
| Test Bias Current | — | 1.6 A |
| Average Output Power (Pout) | — | 74 W |
| Power Gain (Gp) | — | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A |
| Drain Efficiency | — | [DATA_NEEDED: typical % at rated conditions] |
| Application Class | — | Class AB or Class C |
| Modulation Support | — | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE |
| Encapsulado | — | NI-1230-8 (ceramic bolt-down, 2-lead flange) |
| Lead-Free Status | — | Yes |