MRF8S19260HSR6 vs MRF8S19260HR6 Vergleich

Detaillierter Direktvergleich von MRF8S19260HSR6 von NXP Semiconductors und MRF8S19260HR6 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S19260HSR6 MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP

MRF8S19260HSR6 ✓ Aktiv
NXP Semiconductors
MRF8S19260HR6 MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP

MRF8S19260HR6 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S19260HSR6 MRF8S19260HR6
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $124,00 $96,40
Manufacturer NXP Semiconductors (formerly Freescale) Freescale Semiconductor (now NXP Semiconductors)
Part Number MRF8S19260HSR6 —
Transistortyp LDMOS, N-Channel, Dual LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 1930 MHz to 1990 MHz —
Test Frequency 1.99 GHz 1.96 GHz (1960 MHz)
Drain-Source Voltage (Max Rated) 65 V —
Operating Drain Voltage (Typical) 30 V —
Continuous Drain Current (Test) 1.6 A —
Output Power (CW / Avg) 74 W average —
Power Gain 18.2 dB at 1.99 GHz —
Gehäuse / Bauform NI-1230S-8 (ceramic air-cavity bolt-down) —
Montageart Chassis / Flange Mount (through-hole RF bolt-down) Chassis / heatsink mount (bolt-down flange)
Lead Free Status Compliant (per DigiKey listing) —
RoHS-Status Compliant [DATA_NEEDED: confirm from NXP product page]
Operating Mode Class AB and Class C capable —
Application W-CDMA, CDMA, multi-carrier cellular base station PA —
Technology — Laterally Diffused Metal-Oxide Semiconductor (LDMOS)
Frequency Range — 1930 MHz to 1990 MHz
Drain-Source Voltage (V(BR)DSS) Rated — 65 V
Operating Drain Voltage (Test) — 30 V
Test Bias Current — 1.6 A
Average Output Power (Pout) — 74 W
Power Gain (Gp) — 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A
Drain Efficiency — [DATA_NEEDED: typical % at rated conditions]
Application Class — Class AB or Class C
Modulation Support — CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE
Gehäuse — NI-1230-8 (ceramic bolt-down, 2-lead flange)
Lead-Free Status — Yes

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern