MRF8S9120NR3 vs MRF8P9040NR1 Comparison
Detailed side-by-side comparison of MRF8S9120NR3 by NXP Semiconductors and MRF8P9040NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ ActiveSpecification Comparison
| Parameter | MRF8S9120NR3 | MRF8P9040NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $99.50 | $24.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S9120NR3 | — |
| Transistor Type | Lateral N-Channel MOSFET, Enhancement-Mode | N-Channel Lateral MOSFET (RF Power) |
| Application | W-CDMA / cellular base station RF power amplifier final stage | — |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) | 728 MHz to 960 MHz |
| Drain Supply Voltage (VDD) | 28 V | — |
| Average Output Power | 33 W (W-CDMA, single-carrier) | — |
| Power Gain (typical) | 19.8 dB | — |
| Quiescent Drain Current (IDQ) | 800 mA typical | — |
| Package | OM-780-2 (ceramic air-cavity, flange mount) | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Mounting Type | Flange / chassis mount (through-hole RF package) | Surface Mount / Flange Mount |
| Operating Class | Class AB, Class C | — |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier | CDMA, W-CDMA, LTE |
| Maximum Junction Temperature | [DATA_NEEDED: maximum junction temperature] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | Gold metallisation (typical for HV8 process) | — |
| Technology | — | HV8 Lateral N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Pin Count | — | 4 (Drain on flange) |
| PA Topology Suitability | — | Class AB, Class C |
| MSL Level | — | 3 |
| Lead-Free | — | Yes (per typical NXP HV8 family) |