MRF8S9120NR3 vs MRF8P9040NR1 Vergleich
Detaillierter Direktvergleich von MRF8S9120NR3 von NXP Semiconductors und MRF8P9040NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S9120NR3 | MRF8P9040NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,50 | $24,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S9120NR3 | — |
| Transistortyp | Lateral N-Channel MOSFET, Enhancement-Mode | N-Channel Lateral MOSFET (RF Power) |
| Application | W-CDMA / cellular base station RF power amplifier final stage | — |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) | 728 MHz to 960 MHz |
| Drain Supply Voltage (VDD) | 28 V | — |
| Average Output Power | 33 W (W-CDMA, single-carrier) | — |
| Power Gain (typical) | 19.8 dB | — |
| Quiescent Drain Current (IDQ) | 800 mA typical | — |
| Gehäuse | OM-780-2 (ceramic air-cavity, flange mount) | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Montageart | Flange / chassis mount (through-hole RF package) | Surface Mount / Flange Mount |
| Operating Class | Class AB, Class C | — |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier | CDMA, W-CDMA, LTE |
| Maximum Junction Temperature | [DATA_NEEDED: maximum junction temperature] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | Gold metallisation (typical for HV8 process) | — |
| Technology | — | HV8 Lateral N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Pin-Anzahl | — | 4 (Drain on flange) |
| PA Topology Suitability | — | Class AB, Class C |
| MSL-Level | — | 3 |
| Lead-Free | — | Yes (per typical NXP HV8 family) |