MRF8S9120NR3 vs MRF8P9040NR1 Comparaison
Comparaison détaillée côte à côte de MRF8S9120NR3 par NXP Semiconductors et MRF8P9040NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S9120NR3 | MRF8P9040NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $99,50 | $24,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S9120NR3 | — |
| Type de transistor | Lateral N-Channel MOSFET, Enhancement-Mode | N-Channel Lateral MOSFET (RF Power) |
| Application | W-CDMA / cellular base station RF power amplifier final stage | — |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) | 728 MHz to 960 MHz |
| Drain Supply Voltage (VDD) | 28 V | — |
| Average Output Power | 33 W (W-CDMA, single-carrier) | — |
| Power Gain (typical) | 19.8 dB | — |
| Quiescent Drain Current (IDQ) | 800 mA typical | — |
| Boîtier | OM-780-2 (ceramic air-cavity, flange mount) | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| Type de montage | Flange / chassis mount (through-hole RF package) | Surface Mount / Flange Mount |
| Operating Class | Class AB, Class C | — |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier | CDMA, W-CDMA, LTE |
| Maximum Junction Temperature | [DATA_NEEDED: maximum junction temperature] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | Gold metallisation (typical for HV8 process) | — |
| Technology | — | HV8 Lateral N-Channel Enhancement-Mode |
| Drain-Source Voltage (Vdss) Max | — | 70 V |
| Continuous Drain Current (Id) | — | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | — | 28 V |
| Output Power (Pout) Avg | — | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | — | 19.1 dB |
| Nombre de broches | — | 4 (Drain on flange) |
| PA Topology Suitability | — | Class AB, Class C |
| Niveau MSL | — | 3 |
| Lead-Free | — | Yes (per typical NXP HV8 family) |