MRF8S9170NR3 vs MRF8S9102NR3 Comparison
Detailed side-by-side comparison of MRF8S9170NR3 by NXP Semiconductors and MRF8S9102NR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF8S9170NR3 | MRF8S9102NR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $38.50 | $24.10 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Technology | RF Power LDMOS | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Package | OM-780-2 (ceramic flange) | OM-780-2 (3-pin ceramic, flange mount) |
| Mounting Type | Surface Mount / Flange Mount (bolt-down thermal pad) | Chassis / flange mount with bolt-down thermal pad |
| Operating Temperature | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | — |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 920 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Pin Count | — | 3 |
| RoHS Status | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |