MRF8S9170NR3 vs MRF8S9102NR3 Comparação
Comparação detalhada lado a lado de MRF8S9170NR3 por NXP Semiconductors e MRF8S9102NR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF8S9170NR3 | MRF8S9102NR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $38,50 | $24,10 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Technology | RF Power LDMOS | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| Encapsulamento | OM-780-2 (ceramic flange) | OM-780-2 (3-pin ceramic, flange mount) |
| Tipo de montagem | Surface Mount / Flange Mount (bolt-down thermal pad) | Chassis / flange mount with bolt-down thermal pad |
| Temperatura de operação | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | — |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Test Frequency | — | 920 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| Contagem de pinos | — | 3 |
| Status RoHS | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |